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Proceedings Paper

Black-Si as a platform for sensing
Author(s): G. Gervinskas; P. Michaux; G. Seniutinas; J. S. Hartley; E. L. H. Mayes; R. Verma; B. D. Gupta; P. R. Stoddart; D. Morrish; N. F. Fahim; M. S. Hossain; S. Juodkazis
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Paper Abstract

The nano-textured surface of black silicon can be used as a surface-enhanced Raman scattering (SERS) substrate. Sputtered gold films showed increasing SERS sensitivity for thicknesses from 10 up to 300 nm, with sensitivity growing nonlinearly from around 50 nm until saturation at 500 nm. At 50 nm, a cross over from a discontinuous to a fully percolated film occurs as revealed by morphological and electrical measurements. The roughness of the Au coating increases due to formation of nanocrystallites of gold. Structural characterization of the black- Si needles and their surfaces revealed presence of silicon oxide and fluoride. The sharpest nano-needles had a tip curvature radius of ~10 nm. SERS recognition of analyte using molecular imprinted gels with tetracycline molecules of two different kinds is demonstrated.

Paper Details

Date Published: 7 December 2013
PDF: 9 pages
Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 892305 (7 December 2013); doi: 10.1117/12.2033707
Show Author Affiliations
G. Gervinskas, Swinburne Univ. of Technology (Australia)
P. Michaux, Swinburne Univ. of Technology (Australia)
G. Seniutinas, Swinburne Univ. of Technology (Australia)
J. S. Hartley, Swinburne Univ. of Technology (Australia)
E. L. H. Mayes, RMIT Univ. (Australia)
R. Verma, Indian Institute of Technology Delhi (India)
B. D. Gupta, Indian Institute of Technology Delhi (India)
P. R. Stoddart, Swinburne Univ. of Technology (Australia)
D. Morrish, Swinburne Univ. of Technology (Australia)
N. F. Fahim, Swinburne Univ. of Technology (Australia)
M. S. Hossain, Swinburne Univ. of Technology (Australia)
S. Juodkazis, Swinburne Univ. of Technology (Australia)
Australian National Fabrication Facility (Australia)


Published in SPIE Proceedings Vol. 8923:
Micro/Nano Materials, Devices, and Systems
James Friend; H. Hoe Tan, Editor(s)

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