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Proceedings Paper

Analysis of first proximity voltage on the property of GEN Ⅲ image intensifier
Author(s): Ni Zhang; Yu-feng Zhu; Dan Li; Jing Nie; Tai-min Zhang; Xiao-jian Liu; Zhao-lu Liu; Wei Cheng; Ling-yun Fu
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Paper Abstract

First proximity voltage is the voltage between the cathode of Low Light Level image intensifier and the input surface of Micro-channel plate(MCP). There are so many factors influencing the image intensifier performance, and the first proximity voltage is one of the most important factors that can not be ignored. Based on the theory analysis and test of different proximity voltage on the gain、signal-to-noise ratio and equivalent background noise, this test has studied on the important performance of Gen III image intensifier effected by the proximity voltage. By the experimental study, the increase of first proximity voltage to a certain extent can improve gain、signal-to-noise ratio and equivalent background noise at the same time. The main cause of this phenomenon is that the increase of proximity voltage can enlarge the incident electron energy, and then improve the quantum efficiency of the incident electron; meantime, stray electron produced by field emission at the action of the electric field of filmed-MCP will lead to equivalent background deterioration. Ultimately we conclude that: 1) Signal to noise is proportional to the square of he cathode sensitivity, increases with the first collision energy of the incident electron, especially at 200-500ev. 2)In the increasing process of voltage from 300v to 800v, the gain of filmed-MCP increases rapidly, but lower again when Upk increases further because of gain self-saturation; lgG and lgUpk are linear relationship, thus the curve can intuitively demonstrate the relationship between them. 3) Stray electron produced by field emission at the action of the electric field of filmed-MCP will lead to equivalent background deterioration, but will not exceed the requirements of technical specifications(2.5×10-7lx).

Paper Details

Date Published: 16 August 2013
PDF: 6 pages
Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120R (16 August 2013); doi: 10.1117/12.2033706
Show Author Affiliations
Ni Zhang, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Yu-feng Zhu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Dan Li, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Jing Nie, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Tai-min Zhang, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Xiao-jian Liu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Zhao-lu Liu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Wei Cheng, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Ling-yun Fu, North Night-Vision Science & Technology Group Co., Ltd. (China)


Published in SPIE Proceedings Vol. 8912:
International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications
Benkang Chang; Hui Guo, Editor(s)

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