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Proceedings Paper

Simulations on the electron back-scattering characteristics of ion barrier film
Author(s): Shencheng Fu; Bo Sun; Qi Wang; Gangcheng Jiao; Liu Feng; Ye Li
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Paper Abstract

The simulation calculation and analysis of electron back-scattering characteristics for ion barrier films (IBFs) of Al2O3 was performed by Monte Carlo methods. A physical model for the interaction of low-energy electrons with solid was described. Trajectory and spatial distribution of the electrons were simulated with MATLAB software.The maximum ratio of the back-scattered electrons was 19% at the incident energy of 0.24 keV. Beyond this value, the number of backscattered electron decreased slowly with the increase of the incident energy. The back-scattering ratio increased almost linearly with the increase of IBF density. When the incident energy was 0.7 keV and the film thickness is higher than 7 nm, the electron back-scattering ratio was always ~17% for the Al2O3 IBF. This work provided a theory support for fabricating high performance low-level-light device.

Paper Details

Date Published: 16 August 2013
PDF: 4 pages
Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120P (16 August 2013); doi: 10.1117/12.2033686
Show Author Affiliations
Shencheng Fu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Changchun Univ. of Science and Technology (China)
Bo Sun, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Changchun Univ. of Science and Technology (China)
Qi Wang, Changchun Univ. of Science and Technology (China)
Gangcheng Jiao, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Liu Feng, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Ye Li, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 8912:
International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications
Benkang Chang; Hui Guo, Editor(s)

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