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Proceedings Paper

Metal-oxide-semiconductor field-effect transistors operated by surface plasmon polaritons
Author(s): Takuma Aihara; Ayumi Takeda; Masashi Fukuhara; Yuya Ishii; Mitsuo Fukuda
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Paper Abstract

The operation of a metal-oxide-semiconductor field-effect transistor (MOSFET) by a surface plasmon (SP) signal was demonstrated. The SP detector, composed of a gold/silicon Schottky diode with a nano-slit grating, was monolithically integrated with the MOSFETs on a silicon substrate. SP generation by the nano-slit gating (slit width of 100 nm, slit pitch of 440 nm, and slit depth of 300 nm) was confirmed by analytical calculations based on the finite-difference timedomain method. The SP detector operated at a photon energy (0.80 eV) that was below the bandgap energy of silicon (1.1 eV), with responsivity of 24 nA/mW and a dark current of 1.7 nA under reverse bias of 5.0 V. The photocurrent generated by the SP detector controlled the drain current of a monolithically integrated MOSFET.

Paper Details

Date Published: 7 December 2013
PDF: 6 pages
Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89234F (7 December 2013); doi: 10.1117/12.2033618
Show Author Affiliations
Takuma Aihara, Toyohashi Univ. of Technology (Japan)
Ayumi Takeda, Toyohashi Univ. of Technology (Japan)
Masashi Fukuhara, Toyohashi Univ. of Technology (Japan)
Yuya Ishii, Toyohashi Univ. of Technology (Japan)
Mitsuo Fukuda, Toyohashi Univ. of Technology (Japan)

Published in SPIE Proceedings Vol. 8923:
Micro/Nano Materials, Devices, and Systems
James Friend; H. Hoe Tan, Editor(s)

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