Share Email Print
cover

Proceedings Paper

The application and quantitative testing of 150 million pixel CMOS image sensor
Author(s): Xueyi Gong; Fansheng Cheng; Sijie Huang; Xiaofeng Su; Yucui Dong
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

With the requirements of high time resolution, high spatial and high spectral resolution development in geostationary orbit, photodetector pixel size has gradually become the bottleneck of the space exploration technology. Shanghai Institute of Technical Physics of Chinese Academy of Science has made a new breakthrough in CMOS image sensor area. The scale of its new CMOS image sensor achieves 2.5K×2.5K, and then use 24 detectors to achieve a detector whose scale is 150 million. The detector has been successfully imaging on the ground. In the application process, presents a systematic test and measurement methods to deal with the time noise, dark current, fixed pattern noise, MTF and other parameters of the detector. The test results are below. The MTF of the detector is 0.565 which is measured at 57.21/mm Nyquist frequency. The number of saturated electrons reaches 8.9×104. The total number of transient noise electrons is smaller than 16. The signal to noise ratio is 58.02dB. Through comprehensive analysis and measurement, it shows that the overall performance of the 2.5K×2.5K detector among the same types of products is in the leading position currently.

Paper Details

Date Published: 7 December 2013
PDF: 13 pages
Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89234C (7 December 2013); doi: 10.1117/12.2033523
Show Author Affiliations
Xueyi Gong, Shanghai Institute of Technical Physics (China)
The Graduate Univ. of Chinese Academy of Sciences (China)
Fansheng Cheng, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (China)
Sijie Huang, Shanghai Institute of Technical Physics (China)
The Graduate Univ. of Chinese Academy of Sciences (China)
Xiaofeng Su, Shanghai Institute of Technical Physics (China)
The Graduate Univ. of Chinese Academy of Sciences (China)
Yucui Dong, Shanghai Institute of Technical Physics (China)
The Graduate Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 8923:
Micro/Nano Materials, Devices, and Systems
James Friend; H. Hoe Tan, Editor(s)

© SPIE. Terms of Use
Back to Top