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Proceedings Paper

Subpicosecond dynamics of hot carrier relaxation in InP and GaAs
Author(s): Xiang-Qian Zhou; Uli Lemmer; Klaus Seibert; Gyu Cheon Cho; Waldemar Kuett; Karl Wolter; Heinrich Kurz
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Paper Abstract

Time resolved measurements of the hot carrier relaxation in nP have been performed at room temperature using four different femtosecond techniques. At carrier densities between 1016cm3 and a few times 1018cm3 carrier-carrier scattering has been found to dominate the initial relaxation ensuring the internal thermalization of electrons and holes on a time scale of 1OO'2OO fs. At high excitation densities the subpicosecond cooling of the electrons is found to be clearly slower than expected from simple calculations of the e-LO-phonon interaction. The different relaxation behaviour in GaAs is attributed to strong intervalley scattering mechanisms.

Paper Details

Date Published: 1 August 1990
PDF: 11 pages
Proc. SPIE 1268, Applications of Ultrashort Laser Pulses in Science and Technology, (1 August 1990); doi: 10.1117/12.20334
Show Author Affiliations
Xiang-Qian Zhou, RWTH Aachen (Germany)
Uli Lemmer, RWTH Aachen (Germany)
Klaus Seibert, RWTH Aachen (Germany)
Gyu Cheon Cho, RWTH Aachen (United States)
Waldemar Kuett, RWTH Aachen (Germany)
Karl Wolter, RWTH Aachen (Germany)
Heinrich Kurz, RWTH Aachen (Germany)

Published in SPIE Proceedings Vol. 1268:
Applications of Ultrashort Laser Pulses in Science and Technology
Andre Antonetti, Editor(s)

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