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Proceedings Paper

Research on passivation of type II InAs/GaSb superlattice photodiodes
Author(s): Lei Zhang; Li-xue Zhang; Xiang-wei Shen; Xu-bo Zhu; Zhen-yu Peng; Yan-qiu Lv; Jun-jie Si; Wei-guo Sun
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Paper Abstract

Type II InAs/GaSb superlattice material, because of its excellent predominance, is becoming the best choice for the third generation infrared detector. Surface passivation, which is one of the most important process during the device fabricated, can improve the performance of superlattice detector greatly. In this work, three passivation methods were experimented based on MWIR superlattices, then after electrodes were fabricated, detectors were tested. From the measurements, the passivation of anodic sulfide cooperating with SiO2 is more effective than others, zero-bias resistance area product of device with 5μm cutoff wavelength reach up to 104Ω•cm2 at 77K, reverse-bias dark current density is reduced to 10-5A/cm2 at -1V, peak detectivity is 1010cm•Hz1/2/W and quantum efficiency reach 35%. Retest after a month later, the performance of photodiodes without diversity.

Paper Details

Date Published: 11 September 2013
PDF: 7 pages
Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 890731 (11 September 2013); doi: 10.1117/12.2033223
Show Author Affiliations
Lei Zhang, Luoyang Optoelectro Technology Development Ctr. (China)
Li-xue Zhang, Luoyang Optoelectro Technology Development Ctr. (China)
Xiang-wei Shen, Luoyang Optoelectro Technology Development Ctr. (China)
Xu-bo Zhu, Luoyang Optoelectro Technology Development Ctr. (China)
Zhen-yu Peng, Luoyang Optoelectro Technology Development Ctr. (China)
Yan-qiu Lv, Luoyang Optoelectro Technology Development Ctr. (China)
Jun-jie Si, Luoyang Optoelectro Technology Development Ctr. (China)
Wei-guo Sun, Luoyang Optoelectro Technology Development Ctr. (China)


Published in SPIE Proceedings Vol. 8907:
International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications
Haimei Gong; Zelin Shi; Qian Chen; Jin Lu, Editor(s)

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