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Proceedings Paper

Subnanosecond risetime high power pulse generation using photoconductive bulk GaAs devices
Author(s): A. H. Kim; Maurice Weiner; Robert J. Youmans; Robert J. Zeto
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Paper Abstract

The interest in fast risetime, high power photoconductive devices stems from several potential applications including pulse, impulse, and high power microwave generation [1, 2]. As the voltage becomes large and the switching speed becomes extremely fast, the generation of high power electrical pulses using photoconductive devices becomes very complicated because of effects such as surface flash-over, stray inductance, stray capacitance, and abrupt impedance transitions. Two ap- proaches were taken to produce maximum output voltage amplitude without degradation in switch risetime. A coaxial transmission line with a switch holder filled with a high dielectric strength liquid was fabricated for long pulsewidths ( 2 ns) . For the narrow pulsewidths ( 2 ns) a quasi-radial transmission line was fabricated. By incorporating a photoconductive bulk GaAs device with opposite gridded elec- trodes into these specially designed energy storage elements, and illuminating the switch with a mode-locked Nd:YAG laser, electrical pulses with risetimes of several picoseconds have been realized.

Paper Details

Date Published: 1 August 1990
PDF: 7 pages
Proc. SPIE 1268, Applications of Ultrashort Laser Pulses in Science and Technology, (1 August 1990); doi: 10.1117/12.20331
Show Author Affiliations
A. H. Kim, U.S. Army Electronics Technology and Devices Lab. (United States)
Maurice Weiner, U.S. Army Electronics Technolo (United States)
Robert J. Youmans, U.S. Army Electronics Technolo (United States)
Robert J. Zeto, U.S. Army Electronics Technolo (United States)

Published in SPIE Proceedings Vol. 1268:
Applications of Ultrashort Laser Pulses in Science and Technology
Andre Antonetti, Editor(s)

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