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Proceedings Paper

TCAD simulations of a novel UV and blue-extended photodiode
Author(s): Chang-ping Chen; Xiang-liang Jin; Xiao-ya Zhou; Hongjiao Yang; Jun Luo
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Paper Abstract

In this paper, a new UV and blue-extended photodiode with an octagon-ring-shaped structure is proposed, which have increased responsivity for the UV and blue light, high responsive speed with short rise and fall time and UV/blue selectivity. TCAD simulation approach is used to analyze the structural characteristics and photoelectric characteristics of this new photodiode. For the structural characteristics, doping profile, potential distribution and Electric field distribution are analyzed simply. For the photoelectric characteristics, the influences caused by doping concentration of n-well on dark current, avalanche breakdown voltage and transient response are discussed in detail. The finger distance (D) between two adjacent P+ anodes, the width (W) of P+ anode and the ratio of D/W are analyzed, witch affects the spectral response, DC characteristic and transient response obviously. The work of TCAD simulation in this paper is conducive to extract model parameters and process parameters of this new photodiode, which will further be used for numerical simulation to analyze its photoelectric characteristics, noise characteristics more accurately. This work is also a significant and helpful guide for device design and chip fabrication.

Paper Details

Date Published: 21 August 2013
PDF: 10 pages
Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 89080Z (21 August 2013); doi: 10.1117/12.2032923
Show Author Affiliations
Chang-ping Chen, Xiangtan Univ. (China)
Xiang-liang Jin, Xiangtan Univ. (China)
Xiao-ya Zhou, Xiangtan Univ. (China)
Hongjiao Yang, Xiangtan Univ. (China)
Jun Luo, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 8908:
International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications
Jun Ohta; Nanjian Wu; Binqiao Li, Editor(s)

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