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Proceedings Paper

ROIC for HgCdTe e-APD FPA
Author(s): Guoqiang Chen; Junling Zhang; Pan Wang; Jie Zhou; Lei Gao; Ruijun Ding
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Paper Abstract

Ultra-low light imaging and passive/active dual mode imaging require very low noise optical receivers to achieve detection of fast and weak optical signal. HgCdTe electrons initiated avalanche photodiodes (e-APDs) in linear multiplication mode is the detector of choice thanks to its high quantum efficiency, high gain at low bias, high bandwidth and low noise factor. In my work, a passive/active dual mode readout integrated circuit (ROIC) of e-APD focal plane array (FPA) is designed. Unit cell circuit architecture of ROIC includes a capacitance feedback transimpedance amplifier (CTIA) as preamplifier of ROIC, a high voltage protection module, a comparator, a Sample-Hold circuit module, and output driver stage. There is a protection module in every unit cell circuit which can avoid ROIC to be damaged from avalanche breakdown of some diodes of detector. Conventional 5V CMOS process is applied to implement the high voltage protection with the small area rather than Laterally Diffused Metal Oxide Semiconductor (LDMOS) in high voltage BCD process in the limited 100um×100um pitch area. In CTIA module, three integration capacitances are included in the CTIA module, two of them are switchable to provide different well capacity and noise. Constraints such as pixel area, stability and power lead us design toward a simple one-stage cascade operational transconductance amplifier (OTA) as pre-amplifier. High voltage protection module can protect ROIC to be damaged because of breakdown of some avalanche diodes.

Paper Details

Date Published: 16 August 2013
PDF: 10 pages
Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120F (16 August 2013); doi: 10.1117/12.2032849
Show Author Affiliations
Guoqiang Chen, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Junling Zhang, Shanghai Institute of Technical Physics (China)
Pan Wang, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Jie Zhou, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Lei Gao, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Ruijun Ding, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8912:
International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications
Benkang Chang; Hui Guo, Editor(s)

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