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Proceedings Paper

E-beam resist outgassing for study of correlation between resist sensitivity and e-beam optic contamination
Author(s): Sung-Il Lee; Yun Song Jeong; Cheol Hong Park; Hee Bom Kim; Inkyun Shin; Chan-Uk Jeon
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Paper Abstract

EUV lithography has been investigated as one of the next generation lithography technologies for sub-20 nm patterning because of its high resolution capability. However, outgassing from EUV resists should be improved in order to prevent optic contamination and to implement EUV lithography for high-volume manufacturing. Recently, in e-beam lithography for fabrication of photomask, the resist related outgassing has been also considered as one of the critical issues like that of EUV resists. E-beam exposure dose has been increased gradually in order to make fine patterns with better resolution and line edge roughness. As a result, the total resist outgassing in the application of lower sensitive resists could be increased due to longer exposure time in high vacuum and higher amount of organic compounds such as a photoacid generator and a quencher during e-beam irradiation. Therefore, the study of e-beam resist outgassing needs to understand correlations between outgassed chemical components from resists and e-beam optic contamination. The outgassing evaluations of current three kinds of positive e-beam resists were performed by using a EUV outgassing machine. The commercial e-beam resists show less contamination results compared to that of general EUV resists, relatively. However, the outgassing of e-beam resists was increased with decreasing resist sensitivity. In this view point, the outgassing should be considered as one of the important properties of the newly developed chemically amplified e-beam resists. Therefore, these e-beam resist outgassing results could be used as important data for development of next generation e-beam resists with lower sensitivity, to prevent the e-beam exposure equipment contamination.

Paper Details

Date Published: 28 June 2013
PDF: 10 pages
Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 87010Z (28 June 2013); doi: 10.1117/12.2032772
Show Author Affiliations
Sung-Il Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Yun Song Jeong, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Cheol Hong Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hee Bom Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Inkyun Shin, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chan-Uk Jeon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8701:
Photomask and Next-Generation Lithography Mask Technology XX
Kokoro Kato, Editor(s)

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