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Proceedings Paper

Control over the process of laser annealing of semiconductors
Author(s): Marian Kuzma; Maegorzata M. Pociask; Sheregii Eugen
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Paper Abstract

A laser method of segregation of impurities or interstitial mercury atoms (IMA) in solid phase of Hg0.8Cd0.2Te (MCT) is presented. A theoretical model for this process also has been proposed. Equation for diffusion of impurities or IMA was completed by a term describing the influence of phonon flux on diffusion processes. Computer simulations of the laser annealing process point out possibilities of obtaining a sharp maximum of Hg concentration for appropriately chosen parameters of laser pulse. This was experimentally verified with MCT specimens annealed by a YAG:Nd3+ laser.

Paper Details

Date Published: 1 March 1995
PDF: 4 pages
Proc. SPIE 2202, Laser Technology IV: Research Trends, Instrumentation, and Applications in Metrology and Materials Processing, (1 March 1995); doi: 10.1117/12.203274
Show Author Affiliations
Marian Kuzma, Pedagogical Univ. of Rzeszow (Poland)
Maegorzata M. Pociask, Pedagogical Univ. of Rzeszow (Poland)
Sheregii Eugen, Pedagogical Univ. of Rzeszow (Poland)


Published in SPIE Proceedings Vol. 2202:
Laser Technology IV: Research Trends, Instrumentation, and Applications in Metrology and Materials Processing
Wieslaw L. Wolinski; Zdzislaw Jankiewicz; Jerzy K. Gajda; Bohdan K. Wolczak, Editor(s)

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