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Proceedings Paper

Progressive defects caused by crosstalk between mask fabrication processes
Author(s): Jongkeun Oh; Junyeol Choi; Jaehyuck Choi; Han-shin Lee; Hyungho Koh; Byunggook Kim; Chanuk Jeon
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Paper Abstract

Most of defects generated in mask fabrication processes have been mainly created during each unit process. It becomes more important to detect and remove smaller defects on mask as pattern nodes keep shrinking. Each unit processes are getting not only more challenging to sustain mask quality and defect level but also more influencing on other processes for smaller pattern nodes. New type of defects based on such influences (crosstalk) between different processes is starting to emerge, which is requesting for a revision of defect reduction strategy because dealing with crosstalk defects is directly related with quality and TAT of mask manufacturing. It is relatively difficult to properly understand root-cause or working mechanism of defects generated by crosstalk between different processes. This is because interaction between different processes from defect generation perspectives has hardly been studied. In this paper, we introduce emerging progressive defects created while etched masks are undergoing cleaning process or subsequent events of moving to next process or temporary storage. We will investigate how etch gas residues on mask surface remaining after etching process interact with cleaning chemicals or moisture from subsequent process or environment to trigger defect generation and its growth. We will also examine effects of POD outgassing on generation of crosstalk progressive defect. Based on this understanding, appropriate solutions to mitigate defects caused by crosstalk between mask fabrication processes will be proposed. It is believed that new type of progressive defects caused by crosstalk between different mask fabrication processes will be more flourishing in the near future where mask blank materials, mask manufacturing processes, and chemicals need to diversify in order to meet much tighter specifications of mask quality. Therefore, it is very crucial to have right understandings on the interactions between various processes and eradicate possible root-causes of defect generations.

Paper Details

Date Published: 28 June 2013
PDF: 8 pages
Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 870107 (28 June 2013); doi: 10.1117/12.2032735
Show Author Affiliations
Jongkeun Oh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Junyeol Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jaehyuck Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han-shin Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hyungho Koh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Byunggook Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chanuk Jeon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8701:
Photomask and Next-Generation Lithography Mask Technology XX
Kokoro Kato, Editor(s)

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