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Proceedings Paper

Dose variation and charging due to fogging in electron beam lithography: simulations using CHARIOT Monte Carlo software
Author(s): Sergey Babin; Sergey Borisov; Elena Patyukova
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Paper Abstract

The semiconductor maskmaking industry imposes challenging requirements for the uniformity of critical dimensions (CD) and placement error. In electron beam lithography (EBL), electrons backscatter from the resist and substrate, reach the bottom of objective lens and come back to the resist, causing undesirable exposure and charging far away from the point of exposure. This fogging effects both CD variation and placement accuracy in EBL. The Monte Carlo software CHARIOT was upgraded to be capable of simulating this fogging effect. The results of simulations are presented. It was found that Gaussian approximation is sufficient; the approximation parameters were found for various working distances. The results were used for the correction of charging placement error. Fogging is one of the major contributing factors to the charging placement error; the DISPLACE software tool predicts the displacement map for any layout, which allows for the correction of placement error in maskmaking.

Paper Details

Date Published: 1 October 2013
PDF: 7 pages
Proc. SPIE 8886, 29th European Mask and Lithography Conference, 88860E (1 October 2013); doi: 10.1117/12.2032414
Show Author Affiliations
Sergey Babin, aBeam Technologies, Inc. (United States)
Sergey Borisov, aBeam Technologies, Inc. (United States)
Elena Patyukova, aBeam Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 8886:
29th European Mask and Lithography Conference
Uwe F. W. Behringer; Wilhelm Maurer, Editor(s)

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