Share Email Print
cover

Proceedings Paper

Quantum wells: a driving force of the progress in technology of semiconductor lasers
Author(s): Bohdan Mroziewicz
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Continuous progress observed in performance of semiconductor lasers is to a great extent owed to implementation of quantum well heterostructures. Quantum confinement of carriers in such structures leads to lower threshold current density, higher quantum efficiency and output power, and to many more improvements of laser parameters. Most of them can be further developed when strained layer quantum well heterostructures are used. Application of quantum wires and dots are promising further advantages in the future.

Paper Details

Date Published: 1 March 1995
PDF: 11 pages
Proc. SPIE 2202, Laser Technology IV: Research Trends, Instrumentation, and Applications in Metrology and Materials Processing, (1 March 1995); doi: 10.1117/12.203240
Show Author Affiliations
Bohdan Mroziewicz, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 2202:
Laser Technology IV: Research Trends, Instrumentation, and Applications in Metrology and Materials Processing
Wieslaw L. Wolinski; Zdzislaw Jankiewicz; Jerzy K. Gajda; Bohdan K. Wolczak, Editor(s)

© SPIE. Terms of Use
Back to Top