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Proceedings Paper

Characterization and optimization of the stacked–PN junction photodiodes structure for energy harvesting CMOS image sensor
Author(s): Chen Shi; Chao Liu; Qi Zhang; Li Tian; Hui Wang; Songlin Feng
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Paper Abstract

The characterization and optimization of the stacked-PN junction photodiodes structure for energy harvesting CMOS image sensor is presented. The proposed structure has three desired PN junctions located along a vertical line. With proper connection, these PN junctions can provide high voltage or large current for the different load conditions. They also improve the energy harvesting efficiency compared with the conventional single PN junction. Theoretical analysis and optimizations of this structure are given in the paper as well as the simulation results.

Paper Details

Date Published: 21 August 2013
PDF: 7 pages
Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 89080G (21 August 2013); doi: 10.1117/12.2032371
Show Author Affiliations
Chen Shi, Shanghai Advanced Research Institute (China)
Chao Liu, Shanghai Advanced Research Institute (China)
Qi Zhang, Shanghai Advanced Research Institute (China)
Li Tian, Shanghai Advanced Research Institute (China)
Hui Wang, Shanghai Advanced Research Institute (China)
Songlin Feng, Shanghai Advanced Research Institute (China)


Published in SPIE Proceedings Vol. 8908:
International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications
Jun Ohta; Nanjian Wu; Binqiao Li, Editor(s)

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