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Proceedings Paper

Design and optimization of integrated pixel for the energy-harvesting CMOS image sensor on SOI wafer
Author(s): Yiling Ding; Chen Shi; Qi Zhang; Li Tian; Hui Wang; Songlin Feng
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Paper Abstract

The design and optimization of an integrated pixel for the energy-harvesting CMOS image sensor on SOI technology is presented. The pixel works in energy-harvesting mode and imaging mode. A thick-film SOI process is used to implement the photodiodes so that more solar energy and illumination information could be collected than with the thin-film SOI process for the deeper depletion area. Benefitting from the isolation technology of SOI process, the photodiodes do not share substrate anymore. In the harvesting mode, several photodiodes could be connected in series to generate higher voltage as a power supply. The charge speed under the light with different wave length and power density is simulated. The generated voltage is equal to 1.91V under the light with 330nm wave length and 0.6W/cm2 power density.

Paper Details

Date Published: 21 August 2013
PDF: 7 pages
Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 89080F (21 August 2013); doi: 10.1117/12.2032368
Show Author Affiliations
Yiling Ding, Shanghai Advanced Research Institute (China)
Chen Shi, Shanghai Advanced Research Institute (China)
Qi Zhang, Shanghai Advanced Research Institute (China)
Li Tian, Shanghai Advanced Research Institute (China)
Hui Wang, Shanghai Advanced Research Institute (China)
Songlin Feng, Shanghai Advanced Research Institute (China)


Published in SPIE Proceedings Vol. 8908:
International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications
Jun Ohta; Nanjian Wu; Binqiao Li, Editor(s)

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