Share Email Print
cover

Proceedings Paper

High temperature operating (>80°C) 795-nm VCSEL based on InAlGaAs MQWs active region
Author(s): Jian Zhang; Yongqiang Ning; Jianwei Zhang; Xing Zhang; Lijun Wang
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Design of the active region and analysis of temperature sensitivity of high-temperature operating 795-nm special VCSELs for Chip-Scale Atomic Clock (CSAC) are presented. Composition and thickness of the InAlGaAs multiple quantum wells (MQWs) are optimized at room and elevated temperatures. Temperature sensitivity of the threshold current is analyzed by calculating the temperature dependence of cavity-mode gain over a broad temperature range (25°C-150°C). A self-consistent VCSEL model based on quasi 3D finite element analysis is employed to investigate selfheating effects and temperature distribution in the proposed structure. Output power of 2.5mW is expected from 10μm aperture VCSELs at 10mA current at ambient temperature of 358K.

Paper Details

Date Published: 17 September 2013
PDF: 11 pages
Proc. SPIE 8904, International Symposium on Photoelectronic Detection and Imaging 2013: High Power Lasers and Applications, 89041Q (17 September 2013); doi: 10.1117/12.2032212
Show Author Affiliations
Jian Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Univ. of Chinese Academy of Sciences (China)
Yongqiang Ning, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Jianwei Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Univ. of Chinese Academy of Sciences (China)
Xing Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Lijun Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 8904:
International Symposium on Photoelectronic Detection and Imaging 2013: High Power Lasers and Applications
Andreas Tünnermann; Zejin Liu; Pu Wang; Chun Tang, Editor(s)

© SPIE. Terms of Use
Back to Top