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Proceedings Paper

Calculate IR optical constants of Si substrate under high temperature condition
Author(s): Yugang Jiang; Lishuan Wang; Huasong Liu; Dandan Liu; Chenghui Jiang; Deying Chen; Yaping Yang; Yiqin Ji
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Paper Abstract

A high temperature infrared spectra measuring equipment connected with a FTIR spectrometer (PE) was designed and manufactured. The measuring temperature can range from room-temperature to 500°C and the infrared spectra of substrates and thin films under different temperature can be real-time measured. The Fourier transform infrared transmission spectra of Si substrate under different working temperature were measured in the wavelength region from 2μm to 20μm using high temperature infrared spectra measuring equipment. The measured temperature ranged from room temperature to 500°C with a step of 50°C. Complex dielectric functions of Si substrate under different temperature condition are calculated from FTIR transmittance spectra by WVASE32 software, and the best fitted method was obtained for calculating optical constants of dielectric materials in the high temperature condition. As the increase of working temperature, the refractive index and extinction coefficient of Si substrate increase, when the working temperature reach 300°C, the various quantity of extinction coefficient sharply increase, so Si substrate can be used in the condition below the temperature of 300°C. Thus, through the exact calculated complex dielectric functions under different working temperature condition, we can design and manufacture different thin films using Si as substrate, and applied in in the high temperature condition.

Paper Details

Date Published: 30 August 2013
PDF: 6 pages
Proc. SPIE 8910, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Spectrometer Technologies and Applications, 89100C (30 August 2013); doi: 10.1117/12.2031884
Show Author Affiliations
Yugang Jiang, Tongji Univ. (China)
Tianjin Jinhang Institute of Technical Physics (China)
Lishuan Wang, Tianjin Jinhang Institute of Technical Physics (China)
Huasong Liu, Tianjin Jinhang Institute of Technical Physics (China)
Dandan Liu, Tianjin Jinhang Institute of Technical Physics (China)
Chenghui Jiang, Tianjin Jinhang Institute of Technical Physics (China)
Deying Chen, Harbin Institute of Technology (China)
Yaping Yang, Tongji Univ. (China)
Yiqin Ji, Tianjin Jinhang Institute of Technical Physics (China)
Harbin Institute of Technology (China)


Published in SPIE Proceedings Vol. 8910:
International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Spectrometer Technologies and Applications
Lifu Zhang; Jianfeng Yang, Editor(s)

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