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Proceedings Paper

Minority carrier lifetime studies of narrow bandgap antimonide superlattices
Author(s): Linda Höglund; David Z. Ting; Arezou Khoshakhlagh; Alexander Soibel; Cory J. Hill; Anita Fisher; Sam Keo; Sarath D. Gunapala
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Paper Abstract

In this study optical modulation response and photoluminescence spectroscopy were used to study mid-wave Ga-free InAs/InAsSb superlattices. The minority carrier lifetimes in the different samples varied from 480 ns to 4700 ns, partly due to different background doping concentrations. It was shown that the photoluminescence intensity can be used as a fast non-destructive tool to predict the material quality. It was also demonstrated that it is crucial to use a low excitation power in the photoluminescence measurements in order to get a good correlation between the photoluminescence intensity and the minority carrier lifetime.

Paper Details

Date Published: 31 January 2014
PDF: 7 pages
Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 89930Y (31 January 2014); doi: 10.1117/12.2031864
Show Author Affiliations
Linda Höglund, Jet Propulsion Lab. (United States)
David Z. Ting, Jet Propulsion Lab. (United States)
Arezou Khoshakhlagh, Jet Propulsion Lab. (United States)
Alexander Soibel, Jet Propulsion Lab. (United States)
Cory J. Hill, Jet Propulsion Lab. (United States)
Anita Fisher, Jet Propulsion Lab. (United States)
Sam Keo, Jet Propulsion Lab. (United States)
Sarath D. Gunapala, Jet Propulsion Lab. (United States)

Published in SPIE Proceedings Vol. 8993:
Quantum Sensing and Nanophotonic Devices XI
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)

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