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Proceedings Paper

Exploring probability of shallow ML defect impact to defect assurance
Author(s): Kazuaki Matsui; Noriaki Takagi; Satoshi Takahashi; Yutaka Kodera; Yo Sakata; Shinji Akima
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Paper Abstract

EUV blank defect is one of the key issues the industry has to overcome to implement EUV lithography for HVM (high volume manufacturing). Several inspection techniques for EUV blank defect detection have been proposed, but the blank defect criteria for EUV mask is assumed to be very tight, thus, high sensitivity performance is required for blank inspection. However, it is important how the blank inspection tool to be assessed with appropriate test blanks with properly characterized defects. New programmed defect fabrication method has been introduced and verified that the method enables to fabricate natural-like programmed defects. In this study, it was attempted to fabricate more complex shape defects and investigated how multilayer defects are grown during multilayer deposition. Then, printability simulation was conducted for 3 different defect transition models, and critical multilayer defect shapes and sizes were discussed based on the simulation work.

Paper Details

Date Published: 28 June 2013
PDF: 10 pages
Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 87010Q (28 June 2013); doi: 10.1117/12.2031845
Show Author Affiliations
Kazuaki Matsui, Toppan Printing Co., Ltd. (Japan)
Noriaki Takagi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Satoshi Takahashi, Toppan Printing Co., Ltd. (Japan)
Yutaka Kodera, Toppan Printing Co., Ltd. (Japan)
Yo Sakata, Toppan Printing Co., Ltd. (Japan)
Shinji Akima, Toppan Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 8701:
Photomask and Next-Generation Lithography Mask Technology XX
Kokoro Kato, Editor(s)

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