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Proceedings Paper

Model-based SRAF solutions for advanced technology nodes
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Paper Abstract

Traditional SRAF placement has been governed by a generation of rules that are experimentally derived based on measurements on test patterns for various exposure conditions. But with the shrinking technology nodes, there are increased challenges in coming up with these rules. Model-based SRAF placement can help in improved overall process window, with less effort. This is true especially for two-dimensional layouts, where SRAF placement conflicts can provide a formidable challenge with varying patterns and sources. This paper investigates the trade-offs and benefits of using model-based SRAF placement over rule-based for various design configurations on a full chip. The impact on cost, time, process-window and performance will be studied. This paper will also explore the benefits and limitations of more complex free-form SRAF and OPC shapes generated by Inverse Lithography Technology (ILT), and strategies for integration into a manufacturable mask.

Paper Details

Date Published: 1 October 2013
PDF: 9 pages
Proc. SPIE 8886, 29th European Mask and Lithography Conference, 88860P (1 October 2013); doi: 10.1117/12.2031789
Show Author Affiliations
Srividya Jayaram, Mentor Graphics Corp. (United States)
Pat LaCour, Mentor Graphics Corp. (United States)
James Word, Mentor Graphics Corp. (United States)
Alexander Tritchkov, Mentor Graphics Corp. (United States)


Published in SPIE Proceedings Vol. 8886:
29th European Mask and Lithography Conference
Uwe F. W. Behringer; Wilhelm Maurer, Editor(s)

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