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Proceedings Paper

Analysis of e-beam impact on the resist stack in e-beam lithography process
Author(s): K. Indykeiwicz; B. Paszkiewicz
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Paper Abstract

Paper presents research on the sub-micron gate, AlGaN /GaN HEMT type transistors, fabrication by e-beam lithography and lift-off technique. The impact of the electron beam on the resists layer and the substrate was analyzed by MC method in Casino v3.2 software. The influence of technological process parameters on the metal structures resolution and quality for paths 100 nm, 300 nm and 500 nm wide and 20 μm long was studied. Qualitative simulation correspondences to the conducted experiments were obtained.

Paper Details

Date Published: 25 July 2013
PDF: 9 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 890210 (25 July 2013); doi: 10.1117/12.2031703
Show Author Affiliations
K. Indykeiwicz, Wrocław Univ. of Technology (Poland)
B. Paszkiewicz, Wrocław Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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