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Proceedings Paper

The behavioral approach to silicon carbide power components modeling
Author(s): Mariusz Zubert; Andrzej Napieralski; Małgorzata Napieralska; Grzegorz Jabłoński; Łukasz Starzak; Marcin Janicki
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Paper Abstract

The behavioral and circuit equivalent models applied to silicon carbide semiconductor power devices have been presented. The MOSFET and Merged PiN Schottky diode (MPS) including dynamic electro-thermal modeling have been described in details. The authors also show the problems of the active power estimation for dynamic SiC MPS diode and unrealistic results for manufacturer-provided models.

Paper Details

Date Published: 25 July 2013
PDF: 8 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 890206 (25 July 2013); doi: 10.1117/12.2031378
Show Author Affiliations
Mariusz Zubert, Lodz Univ. of Technology (Poland)
Andrzej Napieralski, Lodz Univ. of Technology (Poland)
Małgorzata Napieralska, Lodz Univ. of Technology (Poland)
Grzegorz Jabłoński, Lodz Univ. of Technology (Poland)
Łukasz Starzak, Lodz Univ. of Technology (Poland)
Marcin Janicki, Lodz Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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