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Proceedings Paper

Characterizations of GaInNAs/GaAs quantum wells
Author(s): Katarzyna Bielak; Damian Pucicki; Beata Ściana; Damian Radziewicz; Wojciech Dawidowski; Mikolaj Badura; Robert Kudrawiec; Jarosław Serafińczuk; Marek Tłaczała
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Paper Abstract

Heterostructures of GaInNAs/GaAs multiple quantum wells were characterized by high resolution x-ray diffraction. Complexity and stress compensating effect of such quaternary alloys cause many characterization problems. One of the most important issue is determination of composition of the material, which cannot be performed utilizing only one characterization method. That is why structural analysis had to be related with optical measurements which give different information correlated with composition. A comparison of theoretical calculations of energy band gap with energy of transitions in GaInNAs QWs from photoluminescence or contactless electro-reflectance measurements supplement the results of HRXRD and gives complete information about the structure required as a feedback to develop technology of heterostructures epitaxial growth.

Paper Details

Date Published: 25 July 2013
PDF: 6 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 89022R (25 July 2013); doi: 10.1117/12.2031298
Show Author Affiliations
Katarzyna Bielak, Wrocław Univ. of Technology (Poland)
Damian Pucicki, Wrocław Univ. of Technology (Poland)
Beata Ściana, Wrocław Univ. of Technology (Poland)
Damian Radziewicz, Wrocław Univ. of Technology (Poland)
Wojciech Dawidowski, Wrocław Univ. of Technology (Poland)
Mikolaj Badura, Wrocław Univ. of Technology (Poland)
Robert Kudrawiec, Wrocław Univ. of Technology (Poland)
Jarosław Serafińczuk, Wrocław Univ. of Technology (Poland)
Marek Tłaczała, Wrocław Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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