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Proceedings Paper

Fabrication of nanocrystallites in the SiOx matrix applicable in microelectronics
Author(s): Tomasz Kolodziej
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Paper Abstract

The development of the technology of fabricating hydrogenated amorphous silicon (a-Si:H) or silicon oxide (SiOx) matrix with nanocrystalline inclusions (nc-Si:H) is the next step in improving the properties of electronic devices, such as solar cells, thin film transistors (TFT), floating gate transistors and others. Those films exhibit increased stability, absorption and carrier mobility. This paper is focused on the technology of manufacturing such films by means of Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD), which is use to fabricate electronic devices. The technology was developed in the Semiconductor Thin Films and Solar Cells Laboratory at the Department of Electronics at the AGH University of Science and Technology. The author describes the manufacturing process based on periodical variation of the process parameters, such as hydrogen to silane ratio (Rh), gas flows, RF power and pressure in the process chamber, during the deposition process. The author also presents the results of the measurements of typical samples with High Resolution Transmission Electron Microscopy (HRTEM), which confirms the existence of the nanocrystallites in the a-Si:H/SiOx matrix.

Paper Details

Date Published: 25 July 2013
PDF: 8 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 89020V (25 July 2013); doi: 10.1117/12.2031295
Show Author Affiliations
Tomasz Kolodziej, AGH Univ. of Science and Technology (Poland)


Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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