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Proceedings Paper

Electrical characterization of GaN-channel MOSFETs
Author(s): Jakub Jasiński; Lidia Łukasiak; Andrzej Jakubowski; Do-Kywn Kim; Dong-Seok Kim; Sung-Ho Hahm; Jung-Hee Lee
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Paper Abstract

The channel mobility and reliability of NMOSFETs with GaN channel are investigated by means of split CV and constant-voltage-stress techniques. The influence of stress polarity and duration on current in the off-state, threshold voltage and subthreshold slope is studied.

Paper Details

Date Published: 25 July 2013
PDF: 6 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 89020U (25 July 2013); doi: 10.1117/12.2031288
Show Author Affiliations
Jakub Jasiński, Warsaw Univ. of Technology (Poland)
Lidia Łukasiak, Warsaw Univ. of Technology (Poland)
Andrzej Jakubowski, Warsaw Univ. of Technology (Poland)
Do-Kywn Kim, Kyungpook National Univ. (Korea, Republic of)
Dong-Seok Kim, Kyungpook National Univ. (Korea, Republic of)
Sung-Ho Hahm, Kyungpook National Univ. (Korea, Republic of)
Jung-Hee Lee, Kyungpook National Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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