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Proceedings Paper

Aspects of SiC diode assembly using Ag technology
Author(s): Marcin Mysliwiec; Marek Guziewicz; Ryszard Kisiel
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Paper Abstract

The aim of our paper is to consider the possibility of applying pure Ag technology for assembly of SiC Schottky diode into a ceramic package able to work at temperatures up to 350°C. Ag micropowder was used for assembly SiC structure to DBC interposer of the ceramic package. Ag wire bonds as well as flip-chip technology using Ag balls were used as material for interconnection systems. The parameters of I-V characteristics were used as a quality factor to determine the Schottky diode after hermetization into ceramic package as well as after ageing in air at 350°C in comparison with characteristics of bare SiC diode.

Paper Details

Date Published: 25 July 2013
PDF: 8 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 89020T (25 July 2013); doi: 10.1117/12.2031286
Show Author Affiliations
Marcin Mysliwiec, Warsaw Univ. of Technology (Poland)
Institute of Electron Technology (Poland)
Marek Guziewicz, Institute of Electron Technology (Poland)
Ryszard Kisiel, Warsaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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