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Proceedings Paper

Investigation of current-voltage characteristics of the transistor structures with double-potential barrier DBMOS
Author(s): Andrzej Mazurak; Dominik Tanous; Bogdan Majkusiak
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Paper Abstract

An influence of the potential in the quantum well in the DB MOS structure on its current-voltage characteristics is considered under the assumption of a sequential tunneling through the double barrier system due to the effective recombination in the well.

Paper Details

Date Published: 25 July 2013
PDF: 6 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 89020S (25 July 2013); doi: 10.1117/12.2031281
Show Author Affiliations
Andrzej Mazurak, Warsaw Univ. of Technology (Poland)
Dominik Tanous, Warsaw Univ. of Technology (Poland)
Bogdan Majkusiak, Warsaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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