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Proceedings Paper

Influence of series resistance determination on the extracted mobility in MOS transistors with Ge channel
Author(s): Jakub Jasiński; Lidia Łukasiak; Andrzej Jakubowski; Catarina Casteleiro; Terry E. Whall; Evan H. Parker; Maksym Myronov; David R. Leadley
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Paper Abstract

The influence of the method of series resistance determination on the extracted channel mobility is investigated in MOS transistors with relaxed and strained Ge channel. The dependence of the extracted mobility on the channel length and the frequency of the signal used to measure capacitance-voltage characteristics are examined.

Paper Details

Date Published: 25 July 2013
PDF: 8 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 89020O (25 July 2013); doi: 10.1117/12.2031269
Show Author Affiliations
Jakub Jasiński, Warsaw Univ. of Technology (Poland)
Lidia Łukasiak, Warsaw Univ. of Technology (Poland)
Andrzej Jakubowski, Warsaw Univ. of Technology (Poland)
Catarina Casteleiro, The Univ. of Warwick (United Kingdom)
Terry E. Whall, The Univ. of Warwick (United Kingdom)
Evan H. Parker, The Univ. of Warwick (United Kingdom)
Maksym Myronov, The Univ. of Warwick (United Kingdom)
David R. Leadley, The Univ. of Warwick (United Kingdom)


Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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