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Proceedings Paper

Fabrication and characterization of thin-film transistors with amorphous In-Ga-Zn-O layers
Author(s): A. Taube; J. Kaczmarski; M. Ekielski; D. Pucicki; E. Kamińska; A. Piotrowska
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Paper Abstract

We report on the fabrication and performance of amorphous oxide thin-film transistors with In-Ga-Zn-O deposited by RF magnetron reactive sputtering for semiconductor channel layer. The influence of the electrical transport properties of the channel on the electrical parameters of thin-film transistors has been determined. By optimizing process parameters depletion-mode n-channel devices with maximum field-effect mobility (μFE) 10.1 cm2/Vs, threshold voltage Vth=-4.85V and on to off current ratio (Ion/Ioff)=2.1x102 have been demonstrated.

Paper Details

Date Published: 25 July 2013
PDF: 6 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 89020N (25 July 2013); doi: 10.1117/12.2031243
Show Author Affiliations
A. Taube, Institute of Electron Technology (Poland)
Warsaw Univ. of Technology (Poland)
J. Kaczmarski, Institute of Electron Technology (Poland)
M. Ekielski, Institute of Electron Technology (Poland)
D. Pucicki, Wrocław Univ. of Technology (Poland)
E. Kamińska, Institute of Electron Technology (Poland)
A. Piotrowska, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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