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Proceedings Paper

Modeling the current of a double-gate MOSFET with very thin active region taking into account mobility dependence on the transverse electric field
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Paper Abstract

Drain current and transconductance of a symmetrical, undoped double-gate MOSFET is modeled for the first time with mobility depending on both the applied voltage and position in the channel leading to analytical formulae. The obtained models are compared with simplified formulae assuming position-independent effective mobility. Good agreement is obtained in the case of one of the selected mobility models.

Paper Details

Date Published: 25 July 2013
PDF: 7 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 89020L (25 July 2013); doi: 10.1117/12.2031070
Show Author Affiliations
Lidia Łukasiak, Warsaw Univ. of Technology (Poland)
Bogdan Majkusiak, Warsaw Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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