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Proceedings Paper

Influence of rapid thermal annealing on optical properties of (In, Ga)(As, N)/GaAs quantum wells
Author(s): Wojciech Dawidowski; Beata Ściana; Magdalena Latkowska; Damian Radziewicz; Damian Pucicki; Katarzyna Bielak; Mikołaj Badura; Marek Tłaczała
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Paper Abstract

Dilute nitride (In, Ga)(As, N) alloys grown on GaAs substrate are a very attractive materials for optoelectronics. In this work we compare the optical properties of (In, Ga)(As, N)/GaAs triple quantum well grown by atmospheric pressure metal organic vapour phase epitaxy. As grown and annealed structures were investigated by means of photoluminescence and contactless electroreflectance spectroscopies. Energies of fundamental transition from each measurement were determined and compared, moreover the value of Stokes shift was assigned and discussed.

Paper Details

Date Published: 25 July 2013
PDF: 7 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 89022G (25 July 2013); doi: 10.1117/12.2031065
Show Author Affiliations
Wojciech Dawidowski, Wrocław Univ. of Technology (Poland)
Beata Ściana, Wrocław Univ. of Technology (Poland)
Magdalena Latkowska, Wrocław Univ. of Technology (Poland)
Damian Radziewicz, Wrocław Univ. of Technology (Poland)
Damian Pucicki, Wrocław Univ. of Technology (Poland)
Katarzyna Bielak, Wrocław Univ. of Technology (Poland)
Mikołaj Badura, Wrocław Univ. of Technology (Poland)
Marek Tłaczała, Wrocław Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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