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Proceedings Paper

On-wafer measurements and characterization of poly-si resistors for evaluation of selected CMOS manufacturing processes
Author(s): Grzegorz Głuszko; Daniel Tomaszewski; Jolanta Malesińska; Krzysztof Kucharski
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Paper Abstract

In this study, measurements of resistance of polysilicon resistors with different widths have been done over the whole surface of the SOI wafers. The obtained results have been used to determine changes in their width, which is equivalent with shortening of the channel length in the photoli-thography process. By studying the elements distributed across the wafers it was possible to assess the homogeneity of the MOS transistor gate manufacturing process. the abstract two lines below author names and addresses.

Paper Details

Date Published: 25 July 2013
PDF: 4 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 89020K (25 July 2013); doi: 10.1117/12.2031057
Show Author Affiliations
Grzegorz Głuszko, Instytut Technologii Elektronowej (Poland)
Daniel Tomaszewski, Instytut Technologii Elektronowej (Poland)
Jolanta Malesińska, Instytut Technologii Elektronowej (Poland)
Krzysztof Kucharski, Instytut Technologii Elektronowej (Poland)


Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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