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Proceedings Paper

Surface passivation of MSM photodetectors made on GaAsN epitaxial layers
Author(s): Iwona Zborowska-Lindert; Beata Ściana; Damian Pucicki; Damian Radziewicz; Marek Panek; Bogusław Boratyński; Andrzej Stafiniak; Maria Ramiączek-Krasowska; Marek Tłaczała
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Paper Abstract

In this paper application of Si3N4, AlN and polyimide to passivate GaAsN/GaAs MSM photodetectors is presented. The MSM structures were made on the undoped GaAsN epitaxial layers in which concentration of nitrogen was varied from 1.0 to 2.6 %. The dark and illuminated I-V characteristics of the devices are presented. Comparison of the dark current value and photoresponse obtained, for selected wavelengths in visible and IR range, from the MSM devices with different passivation layers is provided. Measurements of the dark current and photoresponse in the unpassivated and passivated MSM structures allowed to estimate relation between the bulk and surface components of the dark current. Therefore crystal quality of the epitaxial layers grown in different process conditions could be compared.

Paper Details

Date Published: 25 July 2013
PDF: 4 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 89020I (25 July 2013); doi: 10.1117/12.2031054
Show Author Affiliations
Iwona Zborowska-Lindert, Wrocław Univ. of Technology (Poland)
Beata Ściana, Wrocław Univ. of Technology (Poland)
Damian Pucicki, Wrocław Univ. of Technology (Poland)
Damian Radziewicz, Wrocław Univ. of Technology (Poland)
Marek Panek, Wrocław Univ. of Technology (Poland)
Bogusław Boratyński, Wrocław Univ. of Technology (Poland)
Andrzej Stafiniak, Wrocław Univ. of Technology (Poland)
Maria Ramiączek-Krasowska, Wrocław Univ. of Technology (Poland)
Marek Tłaczała, Wrocław Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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