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Proceedings Paper

The influence of MOVPE process parameters on the buffer resistivity used in AlGaN/GaN heterostructures
Author(s): T. Szymański; M. Wośko; B. Paszkiewicz; R. Paszkiewicz
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Paper Abstract

The influence of growth conditions on properties of high temperature GaN (HT-GaN) buffer used in AlGaN/GaN HEMT heterostructures was studied. Many various factors are presumed to have significant impact on the concluding properties of HT-GaN buffer. In this paper the nucleation layer growth time as well as temperature during high temperature GaN layer growth was selected as a factors alleged to cause variation in final GaN layer properties. The study was designed to show step by step improvement of HT-GaN buffer with consecutive changes of particular parameters. Electrical properties of the AlGaN/GaN heterostructures were determined using impedance spectroscopy method performed with HP 4192A impedance meter equipped in two contact mercury probe. Laser reflectance traces acquired in-situ during MOVPE (Metalorganic Vapor Phase Epitaxy) growth were compered and analyzed in order to correlate growth mechanism with electrical properties of HT-GaN buffer. The improvement of HT-GaN resistivity was shown through decrement of capacitance in the depleted space-charge region.

Paper Details

Date Published: 25 July 2013
PDF: 9 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 89022D (25 July 2013); doi: 10.1117/12.2031051
Show Author Affiliations
T. Szymański, Wrocław Univ. of Technology (Poland)
M. Wośko, Wrocław Univ. of Technology (Poland)
B. Paszkiewicz, Wrocław Univ. of Technology (Poland)
R. Paszkiewicz, Wrocław Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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