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Proceedings Paper

Adjustment of sensivity of ISFET-type micro- and nanosensors
Author(s): Michał Zaborowski; Daniel Tomaszewski; Piotr Grabiec
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Paper Abstract

A study of pH sensitivity of miniature ISFET-type sensors with silicon nitride sensitive layer has been presented. 4 μm wide SOI FET microsensor process and 100 nm FinFET nanosensor process have been completed with oxygen plasma treatment. ID(VDS) and gds characteristics of the devices as well as source follower circuit output signal measurements have been reported. An influence of 1% HF etching of the gate dielectric on pH sensitivity of the sensors has been described and an explanation of phenomenon of the sensitivity adjustment has been proposed.

Paper Details

Date Published: 25 July 2013
PDF: 8 pages
Proc. SPIE 8902, Electron Technology Conference 2013, 89021U (25 July 2013); doi: 10.1117/12.2030890
Show Author Affiliations
Michał Zaborowski, Instytut Technologii Elektronowej (Poland)
Daniel Tomaszewski, Instytut Technologii Elektronowej (Poland)
Piotr Grabiec, Instytut Technologii Elektronowej (Poland)

Published in SPIE Proceedings Vol. 8902:
Electron Technology Conference 2013
Pawel Szczepanski; Ryszard Kisiel; Ryszard S. Romaniuk, Editor(s)

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