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Proceedings Paper

Evaluation of dry technology for removal of pellicle adhesive residue on advanced optical reticles
Author(s): Shazad Paracha; Samy Bekka; Benjamin Eynon; Jaehyuck Choi; Mehdi Balooch; Ivin Varghese; Tyler Hopkins
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Paper Abstract

The fast pace of MOSFET scaling is accelerating the introduction of smaller technology nodes to extend CMOS beyond 20nm as required by Moore’s law. To meet these stringent requirements, the industry is seeing an increase in the number of critical layers per reticle set as it move to lower technology nodes especially in a high volume manufacturing operation. These requirements are resulting in reticles with higher feature densities, smaller feature sizes and highly complex Optical Proximity Correction (OPC), built with using new absorber and pellicle materials. These rapid changes are leaving a gap in maintaining these reticles in a fab environment, for not only haze control but also the functionality of the reticle. The industry standard of using wet techniques (which uses aggressive chemicals, like SPM, and SC1) to repel reticles can result in damage to the sub‐resolution assist features (SRAF’s), create changes to CD uniformity and have potential for creating defects that require other means of removal or repair. Also, these wet cleaning methods in the fab environment can create source for haze growth. Haze can be controlled by: 1) Chemical free (dry) reticle cleaning, 2) In‐line reticle inspection in fab, and 3) Manage the environment where reticles are stored. In this paper we will discuss a dry technique (chemical free) to remove pellicle adhesive residue from advanced optical reticles. Samsung Austin Semiconductors (SAS), jointly worked with Eco‐Snow System (a division of RAVE N.P., Inc.) to evaluate the use of Dry Reactive Gas (DRG) technique to remove pellicle adhesive residue on reticles. This technique can significantly reduce the impact to the critical geometry in active array of the reticle, resulting in preserving the reticle performance level seen at wafer level. The paper will discuss results on the viability of this technique used on advanced reticles.

Paper Details

Date Published: 23 September 2013
PDF: 22 pages
Proc. SPIE 8880, Photomask Technology 2013, 88800M (23 September 2013); doi: 10.1117/12.2030686
Show Author Affiliations
Shazad Paracha, SAMSUNG Austin Semiconductor, LLC (United States)
Samy Bekka, SAMSUNG Austin Semiconductor, LLC (United States)
Benjamin Eynon, SAMSUNG Austin Semiconductor, LLC (United States)
Jaehyuck Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Mehdi Balooch, Eco-Snow Systems (United States)
Ivin Varghese, Eco-Snow Systems (United States)
Tyler Hopkins, Eco-Snow Systems (United States)

Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

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