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Proceedings Paper

Extreme long range process effects characterization and compensation
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Paper Abstract

Proximity Effects in electron beam lithography impact feature dimensions, pattern fidelity and uniformity. These effects are addressed using a mathematical model representing the radial exposure intensity distribution induced by a point electron source, commonly named as the Point Spread Function (PSF). PSF models are usually employed for predicting and compensating for effects up to 15μm. It is well known that there are also some process related phenomena that impact pattern uniformity that have a longer range, namely CMP effects, fogging, etc. Performing proximity effects corrections can result in lengthy run times as file size and pattern densities continue to increase exponentially per technology node. Running corrections for extreme long range phenomena becomes computational and file size prohibitive. Nevertheless, since extreme long range may reach up several millimeters, and new technology nodes require a high level of precision, a strategy for predicting and compensating these phenomena is crucial. In this paper a set of test patterns are presented in order to verify and calibrate the so called extreme long range effects in the electron beam lithography. Moreover, a strategy to compensate for extreme long range effects based on the pattern density is presented. Since the evaluation is based on a density map instead of the actual patterns, the computational effort is feasible. The proposed method may be performed off-line (in contrast to machine standard in-line correction). The advantage of employing off-line compensation relies on enhancing the employ of dose and/or geometry modulation. This strategy also has the advantage of being completely decoupled from other e-beam writer’s internal corrections (like Fogging Effect Correction - FEC).

Paper Details

Date Published: 1 October 2013
PDF: 9 pages
Proc. SPIE 8886, 29th European Mask and Lithography Conference, 88860F (1 October 2013); doi: 10.1117/12.2030664
Show Author Affiliations
Thiago Figueiro, Aselta Nanographics (France)
CEA-LTM, CNRS, Univ. Joseph Fourier (France)
Clyde Browning, Aselta Nanographics (France)
Martin J. Thornton, Aselta Nanographics (France)
CEA-LETI (France)
Cyril Vannuffel, CEA-LETI (France)
Kang-Hoon Choi, Fraunhofer-Ctr. Nanoelektronische Technologien (Germany)
Christoph Hohle, Fraunhofer-Ctr. Nanoelektronische Technologien (Germany)
Jean-Herve Tortai, CEA-LTM, CNRS, Univ. Joseph Fourier (France)
Patrick Schiavone, Aselta Nanographics (France)


Published in SPIE Proceedings Vol. 8886:
29th European Mask and Lithography Conference
Uwe F. W. Behringer; Wilhelm Maurer, Editor(s)

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