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Proceedings Paper

Actinic characterization and modeling of the EUV mask stack
Author(s): Vicky Philipsen; Eric Hendrickx; Rik Jonckheere; Natalia Davydova; Timon Fliervoet; Jens Timo Neumann
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Paper Abstract

This paper presents a detailed mask stack modeling based on experimental actinic characterization of the EUV mask stack. A dedicated mask has been fabricated with line/space gratings down to 40nm half-pitch (at mask level, i.e., 10nm at wafer). Using the Advanced Light Source facility at LBNL extensive reflectometry and diffractometry have been performed. The experimental reflectivity results through incidence angle and through EUV wavelength enable us to model both the multilayer definition, as well as the absorber definition in the simulator. The effective performance of the calibrated mask stack in the simulator is validated against the experimental diffractometry results through incidence angle. The presented experimental mask stack characterization and modeling allows a better definition of the mask stack in the simulation tools to enhance their predictive and precompensation power.

Paper Details

Date Published: 1 October 2013
PDF: 12 pages
Proc. SPIE 8886, 29th European Mask and Lithography Conference, 88860B (1 October 2013); doi: 10.1117/12.2030663
Show Author Affiliations
Vicky Philipsen, IMEC (Belgium)
Eric Hendrickx, IMEC (Belgium)
Rik Jonckheere, IMEC (Belgium)
Natalia Davydova, ASML Netherlands B.V. (Netherlands)
Timon Fliervoet, ASML Netherlands B.V. (Netherlands)
Jens Timo Neumann, Carl Zeiss SMT GmbH (Germany)

Published in SPIE Proceedings Vol. 8886:
29th European Mask and Lithography Conference
Uwe F. W. Behringer; Wilhelm Maurer, Editor(s)

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