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Proceedings Paper

NXE:3300B platform: imaging applications for Logic and DRAM
Author(s): Eelco van Setten; Guido Schiffelers; Cristina Toma; Jo Finders; Dorothe Oorschot; Joep van Dijk; Sjoerd Lok; Rudy Peeters
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Paper Abstract

With the third generation EUV scanner, the NXE:3300B, it is expected that customers will move into volume manufacturing of the devices and processes currently in development. The NXE:3300B has an NA of 0.33 and is positioned at a resolution of 22nm, which can be extended down to 18nm and below with off-axis illumination at full transmission. In this presentation we will demonstrate the imaging performance of the NXE:3300B EUV scanner. With the system operating for almost a year now, we will show the main achievements, and present latest status on system performance, with a focus on imaging of customer device applications. For this, a wide range of features have been evaluated for lithographic performance across the field and across wafer. CD performance for 22nm dense and isolated lines, 18nm and 16nm dense lines with off-axis illumination, 24nm contact holes, as well as performance of customer device structures for 10nm node will be discussed and benchmarked against the current ArF immersion capability. The benefits of EUV for critical customer applications will be discussed, showing excellent imaging results for 2D features and the extension capability to 13nm half pitch and beyond. This demonstrates the capability of EUV to bring the single exposure resolution limit well below what can be achieved with complex multi-patterning techniques on ArFi. The benefit of off-axis illumination usage for process window enhancement at challenging resolutions will be assessed. The influence of mask 3D induced best focus difference on the overlapping depth of focus will also be addressed and compared to current ArFi performance. Furthermore a budget verification will be presented showing CD and contrast budgets for a selection of lithographic features, such as 22nm dense and isolated LS. The contribution of the resist process and the mask will be discussed as well. Finally an outlook will be given to future NA 0.33 systems with improved subsystem performance and full pupil flexibility for off-axis illuminations.

Paper Details

Date Published: 1 October 2013
PDF: 12 pages
Proc. SPIE 8886, 29th European Mask and Lithography Conference, 888604 (1 October 2013); doi: 10.1117/12.2030605
Show Author Affiliations
Eelco van Setten, ASML Netherlands BV (Netherlands)
Guido Schiffelers, ASML Netherlands BV (Netherlands)
Cristina Toma, ASML Netherlands BV (Netherlands)
Jo Finders, ASML Netherlands BV (Netherlands)
Dorothe Oorschot, ASML Netherlands BV (Netherlands)
Joep van Dijk, ASML Netherlands BV (Netherlands)
Sjoerd Lok, ASML Netherlands BV (Netherlands)
Rudy Peeters, ASML Netherlands BV (Netherlands)

Published in SPIE Proceedings Vol. 8886:
29th European Mask and Lithography Conference
Uwe F. W. Behringer; Wilhelm Maurer, Editor(s)

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