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Proceedings Paper

The lithographer's dilemma: shrinking without breaking the bank
Author(s): Harry J. Levinson
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Paper Abstract

It can no longer be assumed that the lithographic scaling which has previously driven Moore’s Law will lead in the future to reduced cost per transistor. Until recently, higher prices for lithography tools were offset by improvements in scanner productivity. The necessity of using double patterning to extend scaling beyond the single exposure resolution limit of optical lithography has resulted in a sharp increase in the cost of patterning a critical construction layer that has not been offset by improvements in exposure tool productivity. Double patterning has also substantially increased the cost of mask sets. EUV lithography represents a single patterning option, but the combination of very high exposure tools prices, moderate throughput, high maintenance costs, and expensive mask blanks makes this a solution more expensive than optical double patterning but less expensive than triple patterning. Directed self-assembly (DSA) could potentially improve wafer costs, but this technology currently is immature. There are also design layout and process integration issues associated with DSA that need to be solved in order to obtain full benefit from tighter pitches. There are many approaches for improving the cost effectiveness of lithography. Innovative double patterning schemes lead to smaller die. EUV lithography productivity can be improved with higher power light sources and improved reliability. There are many technical and business challenges for extending EUV lithography to higher numerical apertures. Efficient contact hole and cut mask solutions are needed, as well as very tight overlay control, regardless of lithographic solution.

Paper Details

Date Published: 1 October 2013
PDF: 6 pages
Proc. SPIE 8886, 29th European Mask and Lithography Conference, 888602 (1 October 2013); doi: 10.1117/12.2030193
Show Author Affiliations
Harry J. Levinson, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 8886:
29th European Mask and Lithography Conference
Uwe F. W. Behringer; Wilhelm Maurer, Editor(s)

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