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Proceedings Paper

Progress in efficiency-optimized high-power diode lasers
Author(s): A. Pietrzak; R. Hülsewede; M. Zorn; O. Hirsekorn; J. Sebastian; J. Meusel; P. Hennig; P. Crump; H. Wenzel; S. Knigge; A. Maaßdorf; F. Bugge; G. Erbert
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Paper Abstract

High-power diode lasers are highly efficient sources of optical energy for industrial and defense applications, either directly or as pump sources for solid state or fiber lasers. We review here how advances in diode laser design and device technology have enabled the performance to be continuously improved. An overview is presented of recent progress at JENOPTIK in the development of commercial diode lasers optimized for peak performance, robust high-yield manufacture and long lifetimes. These diode lasers are tailored to simultaneously operate with reduced vertical carrier leakage, low thermal and electrical resistance and low optical losses. In this way, the highest electro-optical efficiencies are sustained to high currents. For example, 940-nm bars with high fill factor are shown to deliver continuous wave (CW) output powers of 280 W with conversion efficiency of < 60%. These bars have a vertical far field angle with 95% power content of just 40°. In addition, 955-nm single emitters with 90μm stripe width deliver 12 W CW output with power conversion efficiency at the operating point of 69%. In parallel, the Ferdinand-Braun-Institut (FBH) is working to enable the next generation of high power diode lasers, by determining the key limitations to performance and by pioneering new technologies to address these limits. An overview of recent studies at the FBH will therefore also be presented. Examples will include structures with further reduced far field angles, higher lateral beam quality and increased peak power and efficiency. Prospects for further performance improvement will be discussed.

Paper Details

Date Published: 15 October 2013
PDF: 14 pages
Proc. SPIE 8898, Technologies for Optical Countermeasures X; and High-Power Lasers 2013: Technology and Systems, 889807 (15 October 2013); doi: 10.1117/12.2030109
Show Author Affiliations
A. Pietrzak, JENOPTIK Diode Lab GmbH (Germany)
R. Hülsewede, JENOPTIK Diode Lab GmbH (Germany)
M. Zorn, JENOPTIK Diode Lab GmbH (Germany)
O. Hirsekorn, JENOPTIK Diode Lab GmbH (Germany)
J. Sebastian, JENOPTIK Diode Lab GmbH (Germany)
J. Meusel, JENOPTIK Laser GmbH (Germany)
P. Hennig, JENOPTIK Laser GmbH (Germany)
P. Crump, Ferdinand-Braun-Institut (Germany)
H. Wenzel, Ferdinand-Braun-Institut (Germany)
S. Knigge, Ferdinand-Braun-Institut (Germany)
A. Maaßdorf, Ferdinand-Braun-Institut (Germany)
F. Bugge, Ferdinand-Braun-Institut (Germany)
G. Erbert, Ferdinand-Braun-Institut (Germany)


Published in SPIE Proceedings Vol. 8898:
Technologies for Optical Countermeasures X; and High-Power Lasers 2013: Technology and Systems
David H. Titterton; Harro Ackermann; Willy L. Bohn; Mark A. Richardson; Robert J. Grasso, Editor(s)

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