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Proceedings Paper

Under-layer effects for block levels: are they under control?
Author(s): Dongbing Shao; Bidan Zhang; Shayak Banerjee; Hong Kry; Anuja De Silva; Ranee Kwong; Kisup Chung; Yea-Sen Lin; Alan Leslie
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Paper Abstract

Challenges in block levels due to the dilemma of cost control and under-layer effects have been addressed in several papers already, and different approaches to solve the issue have been addressed. Among the known approaches, developable BARC and under-layer aware modeling are the most promising. However, in this paper we will discuss and explain the limitation inefficiency of both methods. In addition, as more block levels are employing etching step, the under-layer dependent etch behavior that we see in some of the block levels is also discussed. All these place great challenges for block level process development. We discuss here possible solutions/improvements including: developable BARC (dBARC) thickness optimization for specific under layers; Simplified model based corrections for lith and etch. This work was performed at the IBM Microelectronics Div, Semiconductor Research and Development Center, Hopewell Junction, NY 12533

Paper Details

Date Published: 9 September 2013
PDF: 11 pages
Proc. SPIE 8880, Photomask Technology 2013, 88802L (9 September 2013); doi: 10.1117/12.2029356
Show Author Affiliations
Dongbing Shao, IBM Corp. (United States)
Bidan Zhang, IBM Corp. (United States)
Shayak Banerjee, IBM Corp. (United States)
Hong Kry, IBM Corp. (United States)
Anuja De Silva, IBM Corp. (United States)
Ranee Kwong, IBM Corp. (United States)
Kisup Chung, IBM Corp. (United States)
Yea-Sen Lin, IBM Corp. (United States)
Alan Leslie, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

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