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Proceedings Paper

THz devices evaluation in a time domain spectroscopy system at 1.55 μm pulse excitation
Author(s): Ioannis Kostakis; Alireza Zandieh; Daniel Hailu; Daryoosh Saeedkia; Mohamed Missous
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Paper Abstract

Following the development of efficient THz devices operating at 1550 nm based on low temperature (LT) grown semiconductor compounds, the effect of the substrate of such devices in the generated THz radiation is investigated, a new compact, portable and reconfigurable fiber based THz spectrometer is built and a pair of THz devices are evaluated in the spectrometer. The key findings are firstly the transparency of the InP substrate to THz radiation, which implies that the generated THz signal from these devices is not affected by the substrate, and secondly the development of a THz spectrometer at 1550 nm laser excitation, which can be used for high quality measurements for various material sensing and characterization applications.

Paper Details

Date Published: 18 October 2013
PDF: 6 pages
Proc. SPIE 8900, Millimetre Wave and Terahertz Sensors and Technology VI, 89000V (18 October 2013); doi: 10.1117/12.2029218
Show Author Affiliations
Ioannis Kostakis, The Univ. of Manchester (United Kingdom)
Alireza Zandieh, TeTechS Inc. (Canada)
Daniel Hailu, TeTechS Inc. (Canada)
Daryoosh Saeedkia, TeTechS Inc. (Canada)
Mohamed Missous, The Univ. of Manchester (United Kingdom)

Published in SPIE Proceedings Vol. 8900:
Millimetre Wave and Terahertz Sensors and Technology VI
Neil Anthony Salmon; Eddie L. Jacobs, Editor(s)

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