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Proceedings Paper

Model-based etch profile simulation of PSM films
Author(s): Michael Grimbergen; Madhavi Chandrachood; Jeffrey Tran; Becky Leung; Keven Yu; Amitabh Sabharwal; Ajay Kumar
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Paper Abstract

For advanced binary and PSM mask etch, final profile control is critically important for achieving desired mask specifications. As an aid to attain profile control, an etch profile simulation method has been developed. The method starts with an initial photoresist profile and incorporates etch rate and directionality information to predict the final etch profile. In this paper, simulated results are compared to measured etch profiles for PSM substrates. The results highlight the importance and implications of incoming resist profile and etch selectivity on final profile.

Paper Details

Date Published: 1 October 2013
PDF: 6 pages
Proc. SPIE 8880, Photomask Technology 2013, 88800X (1 October 2013); doi: 10.1117/12.2029006
Show Author Affiliations
Michael Grimbergen, Applied Materials, Inc. (United States)
Madhavi Chandrachood, Applied Materials, Inc. (United States)
Jeffrey Tran, Applied Materials, Inc. (United States)
Becky Leung, Applied Materials, Inc. (United States)
Keven Yu, Applied Materials, Inc. (United States)
Amitabh Sabharwal, Applied Materials, Inc. (United States)
Ajay Kumar, Applied Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

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