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Proceedings Paper

Defect structure and optical damage resistance of In:Er:LiTaO3 crystals
Author(s): Ting Sun; Xiaodong Zhang; Liang Sun; Rui Wang
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Paper Abstract

In:Er:LiTaO3 single crystals with 1.0mol.% Er3+ and various In3+ ions were grown by the Czochralski method from a congruent melt (CLi/CTa=0.946). Defect structure of the crystals was determined by their infrared absorption spectra. Threshold concentration of In3+ ion is 3.0mol.%. The optical damage resistance of In:Er:LiTaO3 crystals was characterized by the change of light-induced birefringence as well as distortion of transmitted beam pattern. Optical damage resistance of In:Er:LiTaO3 crystals significantly increases when the concentration of In3+ ion exceeds its threshold concentration. The optical damage resistance magnitude of In(3.0mol.%):Er:LiTaO3 crystal is two orders higher than that of Er:LiTaO3 crystal. The change of light-induced birefringence decreases with the increasing In3+ ion concentration. The optical damage resistance could be well understood in view of defect structure.

Paper Details

Date Published: 9 July 2013
PDF: 5 pages
Proc. SPIE 8786, Pacific Rim Laser Damage 2013: Optical Materials for High Power Lasers, 87862B (9 July 2013); doi: 10.1117/12.2028697
Show Author Affiliations
Ting Sun, Harbin Institute of Technology (China)
Xiaodong Zhang, Harbin Institute of Technology (China)
Liang Sun, Harbin Institute of Technology (China)
Yibin Univ. (China)
Rui Wang, Harbin Institute of Technology (China)


Published in SPIE Proceedings Vol. 8786:
Pacific Rim Laser Damage 2013: Optical Materials for High Power Lasers
Jianda Shao; Takahisa Jitsuno; Wolfgang Rudolph, Editor(s)

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