Share Email Print
cover

Proceedings Paper

Physical force optimization for advanced photomask cleaning
Author(s): C. W. Shen; K. W. Lin; C. L. Lu; Luke Hsu; Angus Chin; Anthony Yen
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We investigated methods to extend the damage-free process window for fragile Sub-Resolution Assist Features (SRAF) in mask cleaning using MegaSonic and binary spray techniques. Particle removal efficiency (PRE) was found to increase by 8% and damage reduced from 7 ppm to 0 ppm with the optimization of the spray droplet characteristics through liquid media control. MegaSonic damage was eliminated completely from 10 ppm to 0 ppm by varying physical and chemical properties of the cleaning media. Since particles in the deep trenches are very difficult to remove using droplet spray alone, a combination of MegaSonic and Binary Spray processes was tested. The acoustic effects generated through the MegaSonic combined with optimized droplet impact showed an improvement of 4% in PRE of hard-to-remove trench particles. Overall, the improved process points to a promising solution for overcoming the roadblock in mask cleaning for the advanced mask cleaning.

Paper Details

Date Published: 28 June 2013
PDF: 7 pages
Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 870106 (28 June 2013); doi: 10.1117/12.2028484
Show Author Affiliations
C. W. Shen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
K. W. Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
C. L. Lu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Luke Hsu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Angus Chin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 8701:
Photomask and Next-Generation Lithography Mask Technology XX
Kokoro Kato, Editor(s)

© SPIE. Terms of Use
Back to Top