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Proceedings Paper

Laser crystallization and localized growth of nanomaterials for solar applications
Author(s): Jungbin In; Sang-Gil Ryu; Daeho Lee; Sanghoon Ahn; Andy Cheng Zheng; David Jae-Seok Hwang; Costas P. Grigoropoulos
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Paper Abstract

Laser-assisted localized growth of semiconducting nanostructures is reported. As is the case of conventional crystal growth, localized laser enables three kinds of crystal growth: (1) melt growth (recrystallization) of amorphous silicon nanopillars by pulsed laser; (2) vapor growth (chemical vapor deposition) of germanium nanowires; (3) solution growth (hydrothermal growth) of zinc oxide nanowires. The results not only demonstrate programmable and digital fabrication of laser-assisted crystal growth, but also reveal unusual growth chacracteristics (grain morphologies, growth kinetics). Related to solar applications, it is suggested that these structures can act as epitaxial seeds for growth of coarse grains and as multi-spectral centers for enhanced and engineered light absorption.

Paper Details

Date Published: 16 September 2013
PDF: 5 pages
Proc. SPIE 8826, Laser Material Processing for Solar Energy Devices II, 88260E (16 September 2013); doi: 10.1117/12.2027985
Show Author Affiliations
Jungbin In, Univ. of California, Berkeley (United States)
Sang-Gil Ryu, Univ. of California, Berkeley (United States)
Daeho Lee, Univ. of California, Berkeley (United States)
Sanghoon Ahn, Univ. of California, Berkeley (United States)
Andy Cheng Zheng, Univ. of California, Berkeley (United States)
David Jae-Seok Hwang, Stony Brook Univ. (United States)
Costas P. Grigoropoulos, Univ. of California, Berkeley (United States)


Published in SPIE Proceedings Vol. 8826:
Laser Material Processing for Solar Energy Devices II
Edward W. Reutzel, Editor(s)

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