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Proceedings Paper

HSQ process development for a superior resolution and a reasonable sensitivity for an EB master-mold for nanoimprint lithography
Author(s): Hideo Kobayashi; Hiromasa Iyama; Takeshi Kagatsume; Takashi Sato; Shuji Kishimoto; Tsuyoshi Watanabe
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Paper Abstract

Half-pitch (hp) 11 to 7.5nm will be resolution requirement for 3 to 5 years later in lithography technology. In specific, hp16nm in 2015 and hp11nm in 2019 for flash memory, bit pitch (bp) 18nm in 2015, bp15nm in 2018 for HDD patterned media, such extremely fine patterning capability is expected. We have been studying a positive resist ZEP520A particularly on its developers and process for the last 5 years. And, its resolution limit is hp16nm in lines and spaces pattern and bp22nm bit patterns for patterned media, in a large and practical patterning area (Figure 1). ZE520A is an option to pursue the resolution limit for the future. However, since it is a positive-tone resist, dark erosion is significant between holes particularly on bp25nm and below, even when the highest resolution developer of an alcohol and a fluoro-carbon mixture is used. ZEP holes in the nearest were not isolated but connected due to excess dark erosion, which seemed to be caused by EB back-scattering and fogging. If a negative-tone resist is employed, it would cause residue instead between pillars. However, the residue can be eliminated by etching back to the bottom, and the pillars can be remained without defects (Figure 2).

Paper Details

Date Published: 20 September 2013
PDF: 10 pages
Proc. SPIE 8880, Photomask Technology 2013, 88802E (20 September 2013); doi: 10.1117/12.2027870
Show Author Affiliations
Hideo Kobayashi, HOYA Corp. (Japan)
Hiromasa Iyama, HOYA Corp. (Japan)
Takeshi Kagatsume, HOYA Corp. (Japan)
Takashi Sato, HOYA Corp. (Japan)
Shuji Kishimoto, HOYA Corp. (Japan)
Tsuyoshi Watanabe, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

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